100V 80A, 9mз Power Mosfet Transistor Qualified to AEC Q101 UIS Capability FDB3632

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Anterwell Technology Ltd.

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Name: 100V 80A 9mз Power Mosfet Transistor Qualified to AEC Q101 UIS Capability FDB3632
Brand: FAIRCHILD
Price: 1 USD

Brand Name : FAIRCHILD

Model Number : FDB3632

Certification : Original Factory Pack

Place of Origin : Thailand

MOQ : 20pcs

Price : Negotiation

Payment Terms : T/T, Western Union,PayPal

Supply Ability : 5200PCS

Delivery Time : 1 Day

Packaging Details : please contact me for details

Drain to Source Voltage : 100 V

Gate to Source Voltage : ±20 V

Continuous (T 80 A C < 111oC, VGS = 10V) : 80 A

Continuous (Tamb = 25oC, VGS = 10V, RθJA = 43oC/W) : 12 A

Single Pulse Avalanche Energy (Note 1) : 393 mJ

Power dissipation : 310 W

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FDB3632 / FDP3632 / FDI3632

N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ

Features

• rDS(ON) = 7.5mΩ (Typ.), VGS = 10V, ID = 80A

• Qg(tot) = 84nC (Typ.), VGS = 10V 100V 80A, 9mз Power Mosfet Transistor Qualified to AEC Q101 UIS Capability FDB3632

• Low Miller Charge

• Low QRR Body Diode

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101 Formerly developmental type 82784

Applications

• DC/DC converters and Off-Line UPS

• Distributed Power Architectures and VRMs

• Primary Switch for 24V and 48V Systems

• High Voltage Synchronous Rectifier

• Direct Injection / Diesel Injection Systems

• 42V Automotive Load Control

• Electronic Valve Train Systems

100V 80A, 9mз Power Mosfet Transistor Qualified to AEC Q101 UIS Capability FDB3632

Product Tags:

power mosfet ic

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