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GaAs Ired & Photo - Transistor , Programmable Controller TLP504A-2

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GaAs Ired & Photo - Transistor , Programmable Controller TLP504A-2

Brand Name : Anterwell

Model Number : TLP504A-2

Certification : new & original

Place of Origin : original factory

MOQ : 10pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 4800pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Pulse forward current : 1 (100μs pulse, 100pps) A

Reverse voltage : 5 V

Junction temperature : 125 °C

Collector−emitter voltage : 55 V

Emitter−collector voltage : 7 V

Collector current : 50 mA

Storage temperature range : −55~150 °C

Operating temperature range : −55~100 °C

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TOSHIBA Photocoupler GaAs Ired & Photo−Transistor

TLP504A,TLP504A−2

Programmable Controllers AC / DC−Input Module Solid State Relay

The TOSHIBA TLP504A and TLP504A−2 consists of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode.

The TLP504A offers two isolated channels in an eight lead plastic DIP package, while the TLP504A−2 provides four isolated channels in a sixteen plastic DIP package.

• Collector−emitter voltage: 55 V (min.)

• Current transfer ratio: 50% (min.) Rank GB: 100% (min.)

• Isolation voltage: 2500 Vrms (min.)

• UL recognized: UL1577,

File no. E67349

GaAs Ired & Photo - Transistor , Programmable Controller TLP504A-2GaAs Ired & Photo - Transistor , Programmable Controller TLP504A-2

Pin Configurations (top view)

GaAs Ired & Photo - Transistor , Programmable Controller TLP504A-2

Absolute Maximum Ratings (Ta = 25°C)

Characteristic Symbol Rating Unit
TLP504A TLP504A−2
LED Forward current IF 60 50 mA
Forward current derating ΔIF / °C −0.7 (Ta ≥ 39°C) −0.5 (Ta ≥ 25°C) mA /°C
Pulse forward current IFP 1 (100μs pulse, 100pps) A
Reverse voltage VR 5 V
Junction temperature Tj 125 °C
Detector Collector−emitter voltage VCEO 55 V
Emitter−collector voltage VECO 7 V
Collector current IC 50 mA
Collector power dissipation (1 circuit) PC 150 100 mW

Collector power dissipation derating

(1 circuit Ta ≥ 25°C)

ΔPC / °C -1.5 -1.0 mW /°C
Junction temperature Tj 125 °C
Storage temperature range Tstg −55~150 °C
Operating temperature range Topr −55~100 °C
Lead soldering temperature Tsol 260 (10 s) °C
Total package power dissipation RT 250 150 mW

Total package power dissipation derating

(Ta ≥ 25°C)

ΔPT / °C -2.5 -1.5 mW / °C
Isolation voltage BVS

2500 (AC, 1min., R.H.≤ 60%)

(Note 1)

Vrms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Note 1: Device considered a two terminal device: LED side pins shorted together and detector side pins shorted together.


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