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NPN Epitaxial Silicon Transistor POWER AMPLIFIER APPLICATIONS isc Silicon NPN Power Transistor 2SC5200

Name: NPN Epitaxial Silicon Transistor POWER AMPLIFIER APPLICATIONS isc Silicon NPN Power Transistor 2SC5200
Brand: FAIRCHILD
Price: 1 USD

Brand Name : FAIRCHILD

Model Number : 2SC5200

Certification : Original Factory Pack

Place of Origin : Original

MOQ : 20pcs

Price : Negotiation

Payment Terms : T/T, Western Union,PayPal

Supply Ability : 5200PCS

Delivery Time : 1 Day

Packaging Details : please contact me for details

High Current Capability : IC = 15A.

High Power Dissipation : 150watts.

High Frequency : 30MHz

High Voltage : VCEO=230V

Collector-Base Voltage : 230 V

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2SC5200/FJL4315

NPN Epitaxial Silicon Transistor

Applications NPN Epitaxial Silicon Transistor POWER AMPLIFIER APPLICATIONS isc Silicon NPN Power Transistor 2SC5200

• High-Fidelity Audio Output Amplifier

• General Purpose Power Amplifier

Features

• High Current Capability: IC = 15A.

• High Power Dissipation : 150watts.

• High Frequency : 30MHz.

• High Voltage : VCEO=230V

• Wide S.O.A for reliable operation.

• Excellent Gain Linearity for low THD.

• Complement to 2SA1943/FJL4215.

• Thermal and electrical Spice models are available.

• Same transistor is also available in:

-- TO3P package, 2SC5242/FJA4313 : 130 watts

-- TO220 package, FJP5200 : 80 watts

-- TO220F package, FJPF5200 : 50 watts

Absolute Maximum Ratings* Ta = 25°C unless otherwise noted

Symbol	Parameter	Ratings	Units
BV_CBO 230 V	BVCBO Collector-Base Voltage	230	V
BV_CEO	Collector-Emitter Voltage	230	V
BV_EBO	BVEBO Emitter-Base Voltage 5 V	5	V
I_C	Collector Current(DC)	15	A
I_B	Base Current	1.5	A
P_D	Total Device Dissipation(TC=25°C) Derate above 25°C	150 1.04	W W/°C
T_J, T_STG	Junction and Storage Temperature	- 50 ~ +150	°C

Typical Characteristics

NPN Epitaxial Silicon Transistor POWER AMPLIFIER APPLICATIONS isc Silicon NPN Power Transistor 2SC5200

Product Tags:

npn smd transistor

multi emitter transistor

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