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Ultra Low On-Resistance HEXFET Power MOSFET P-Channel MOSFET SOT-23 Footprint Fast Switching IRLML6402TRPBF

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Ultra Low On-Resistance HEXFET Power MOSFET P-Channel MOSFET SOT-23 Footprint Fast Switching IRLML6402TRPBF

Brand Name : IRF

Model Number : IRLML6402TRPBF

Certification : Original Factory Pack

Place of Origin : Original

MOQ : 20pcs

Price : Negotiation

Payment Terms : T/T, Western Union,PayPal

Supply Ability : 5200PCS

Delivery Time : 1 Day

Packaging Details : please contact me for details

Drain- Source Voltage : -20 V

Continuous Drain Current, VGS @ -4.5V : -3.7 A

Continuous Drain Current, VGS @-4.5V : -2.2 A

Pulsed Drain Current : -22 A

Power Dissipation : 1.3 W

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HEXFET Power MOSFET T

♦Ultra Low On-Resistance Ultra Low On-Resistance HEXFET Power MOSFET P-Channel MOSFET SOT-23 Footprint Fast Switching IRLML6402TRPBF

♦P-Channel MOSFET

♦SOT-23 Footprint

♦Low Profile (<1.1mm)

♦Available in Tape and Reel

♦Fast Switching

Ultra Low On-Resistance HEXFET Power MOSFET P-Channel MOSFET SOT-23 Footprint Fast Switching IRLML6402TRPBF These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.

A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3™, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.

	Parameter	Max.	Units
V_DS	Drain- Source Voltage	-20	V
I_D @ TA = 25°C	Continuous Drain Current, VGS @ -4.5V	-3.7	A
I_D @ TA= 70°C	Continuous Drain Current, VGS @ -4.5V	-2.2
I_DM	Pulsed Drain Current	-22
P_D @TA = 25°C	Power Dissipation	1.3	W
P_D @TA = 70°C	Power Dissipation	0.8	W
	Linear Derating Factor	0.01	W/°C
E_AS	Single Pulse Avalanche Energy	11	mJ
V_GS	Gate-to-Source Voltage	± 12	V

Product Tags:

power mosfet ic

silicon power transistors

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