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FGH60N60SFD Power Mosfet Module 600V , 60A Field Stop IGBT

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FGH60N60SFD Power Mosfet Module 600V , 60A Field Stop IGBT

Brand Name : Anterwell

Model Number : FGH60N60SFD

Certification : new & original

Place of Origin : original factory

MOQ : 20pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : Negotiate

Delivery Time : 1 day

Packaging Details : Please contact me for details

Collector to Emitter Voltage : 600 V

Gate to Emitter Voltage : ± 20 V

Collector Current @ TC = 25℃ : 120 A

Pulsed Collector Current @ TC = 25℃ : 180 A

Operating Junction Temperature : -55 to +150 ℃

Storage Temperature Range : -55 to +150 ℃

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FGH60N60SFD

600V, 60A Field Stop IGBT

Features

• High current capability

• Low saturation voltage: VCE(sat) =2.3V @ IC = 60A

• High input impedance

• Fast switching

• RoHS compliant

Applications

• Induction Heating, UPS, SMPS, PFC

General Description

Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential.

FGH60N60SFD Power Mosfet Module 600V , 60A Field Stop IGBT

Absolute Maximum Ratings

Symbol Description Ratings Units
VCES Collector to Emitter Voltage 600 V
VGES Gate to Emitter Voltage ± 20 V
IC Collector Current @ TC = 25℃ 120 A
Collector Current @ TC = 100℃ 60 A
ICM (1) Pulsed Collector Current @ TC = 25℃ 180 A
PD Maximum Power Dissipation @ TC = 25℃ 378 W
Maximum Power Dissipation @ TC = 100℃ 151 W
TJ Operating Junction Temperature -55 to +150
Tstg Storage Temperature Range -55 to +150
TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300

Notes: 1: Repetitive test, Pulse width limited by max. juntion temperature

Mechanical Dimensions

TO-247AB (FKS PKG CODE 001)

FGH60N60SFD Power Mosfet Module 600V , 60A Field Stop IGBT


Product Tags:

npn smd transistor

      

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