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Brand Name : Anterwell
Model Number : STP10NK80ZFP
Certification : new & original
Place of Origin : original factory
MOQ : 10pcs
Price : Negotiate
Payment Terms : T/T, Western Union, Paypal
Supply Ability : 7200pcs
Delivery Time : 1 day
Packaging Details : Please contact me for details
Drain-source Voltage : 800 V
Drain-gate Voltage : 800 V
Gate- source Voltage : ± 30 V
Peak Diode Recovery voltage slope : 4.5 V/ns
Operating Junction Temperature : -55 to 150°C
Storage Temperature : -55 to 150°C
STP10NK80Z - STP10NK80ZFP
STW10NK80Z
N-CHANNEL 800V - 0.78Ω - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH™Power MOSFET
TYPE | VDSS | RDS(on) | ID | Pw |
STP10NK80Z STP10NK80ZFP STW10NK80Z | 800 V 800 V 800 V | < 0.90 Ω < 0.90 Ω < 0.90 Ω | 9 A 9 A 9 A | 160 W 40 W 160 W |
■ TYPICAL RDS(on) = 0.78 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES
■ DC-AC CONVERTERS FOR WELDING, UPS AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol | Parameter | Value | Unit | ||
STP10NK80Z | STP10NK80ZFP | STW10NK80Z | |||
VDS | Drain-source Voltage (VGS = 0) | 800 | V | ||
VDGR | Drain-gate Voltage (RGS = 20 kΩ) | 800 | V | ||
VGS | Gate- source Voltage | ± 30 | V | ||
ID | Drain Current (continuous) at TC = 25°C | 9 | 9 (*) | 9 | A |
ID | Drain Current (continuous) at TC = 100°C | 6 | 6 (*) | 6 | A |
IDM (•) | Drain Current (pulsed) | 36 | 36 (*) | 36 | A |
PTOT | Total Dissipation at TC = 25°C | 160 | 40 | 160 | W |
Derating Factor | 1.28 | 0.32 | 1.28 | W/°C | |
VESD(G-S) | Gate source ESD(HBM-C=100pF, R=1.5KΩ) | 4 | KV | ||
dv/dt (1) | Peak Diode Recovery voltage slope | 4.5 | V/ns | ||
VISO | Insulation Withstand Voltage (DC) | - | 2500 | - | V |
Tj Tstg | Operating Junction Temperature Storage Temperature | -55 to 150 -55 to 150 | °C |
(•) Pulse width limited by safe operating area
(1) ISD ≤9A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
Stock Offer (Hot Sell)
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N - CHANNEL Zener Protected SuperMESH ⑩ Power Mosfet Transistor STP10NK80ZFP Images |