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2N7002LT1G power mosfet ic Power Mosfet Transistor Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23

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2N7002LT1G power mosfet ic Power Mosfet Transistor Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23

Brand Name : Anterwell

Model Number : 2N7002LT1G

Certification : new & original

Place of Origin : original factory

MOQ : 10pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 8600pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Drain−Source Voltage : 60 Vdc

Drain−Gate Voltage (RGS = 1.0 M) : 60 Vdc

Thermal Resistance, Junction to Ambient : 556 °C/W

TJ : −55 to +150 °C

Tstg : −55 to +150 °C

Package : SOT−23

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2N7002L

Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23

Features

• Pb−Free Packages are Available

V(BR)DSS RDS(on) MAX ID MAX
60 V

7.5  @ 10 V,

500 mA

115 mA

MAXIMUM RATINGS

Rating Symbol Value Unit
Drain−Source Voltage VDSS 60 Vdc
Drain−Gate Voltage (RGS = 1.0 M) VDGR 60 Vdc

Drain Current

− Continuous TC = 25°C (Note 1)

− Continuous TC = 100°C (Note 1)

− Pulsed (Note 2)

ID

ID

IDM

±115

±75

±800

mAdc

Gate−Source Voltage

− Continuous

− Non−repetitive (tp ≤ 50 μs)

VGS

VGSM

±20

±40

Vdc

Vpk

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

2N7002LT1G power mosfet ic Power Mosfet Transistor Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23

PACKAGE DIMENSIONS

2N7002LT1G power mosfet ic Power Mosfet Transistor Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23

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Product Tags:

power mosfet ic

      

silicon power transistors

      
China 2N7002LT1G power mosfet ic Power Mosfet Transistor Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 wholesale

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