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AO3400A Power Mosfet Transistor N-Channel Enhancement Mode Field Effect Transistor

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AO3400A Power Mosfet Transistor N-Channel Enhancement Mode Field Effect Transistor

Brand Name : ALPHA

Model Number : AO3400A

Certification : Original Factory Pack

Place of Origin : 100% new & original

MOQ : 100pcs

Price : negotiation

Payment Terms : T/T, Western Union,Payapl

Supply Ability : 6000PCS

Delivery Time : 1 Day

Packaging Details : please contact me for details

Drain-Source Voltage : 30 V

Gate-Source Voltage : ±12 V

Pulsed Drain Current B : 25 A

Continuous Drain : TA=25°C

Junction and Storage Temperature Range : -55 to 150°C

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AO3400A Power Mosfet Transistor N-Channel Enhancement Mode Field Effect TransistorAO3400A

N-Channel Enhancement Mode Field Effect Transistor

General Description

The AO3400A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400A is Pb-free (meets ROHS & Sony 259 specifications).

Features

VDS (V) = 30V

ID = 5.7A (VGS = 10V)

RDS(ON) < 26.5mΩ (VGS = 10V)

RDS(ON) < 32mΩ (VGS = 4.5V)

RDS(ON) < 48mΩ (VGS = 2.5V)

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s RθJA 70 90 °C/W
Maximum Junction-to-Ambient A Steady-State 100 125 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 63 80 °C/W


Product Tags:

power mosfet ic

      

silicon power transistors

      
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