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HEXFET Power Mosfet Transistor , power mosfet module IRF7329

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Anterwell Technology Ltd.

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HEXFET Power Mosfet Transistor , power mosfet module IRF7329

Brand Name : IRF

Model Number : IRF7329

Certification : Original Factory Pack

Place of Origin : Thailand

MOQ : 5pcs

Price : Negotiation

Payment Terms : T/T, Western Union,PayPal

Supply Ability : 290PCS

Delivery Time : 1 Day

Packaging Details : please contact me for details

Drain- Source Voltage : -12 V

Continuous Drain Current, VGS @ -4.5V : -7.4 A

Pulsed Drain Current : -37 A

Power Dissipation : 2.0 W

Linear Derating Factor : 16 mW/°C

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HEXFET Power Mosfet Transistor , power mosfet module IRF7329

Trench Technology

Ultra Low On-Resistance

Dual P-Channel MOSFET

Low Profile (<1.8mm)

Available in Tape & Reel

Lead-Free

Description

New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering technique

	Parameter	Max.	Units
VDS	Drain- Source Voltage	-12	V
I_D @ TA = 25°C	Continuous Drain Current, VGS @ -4.5V	-9.2	A
I_D@ TA= 70°C	Continuous Drain Current, VGS @ -4.5V -7.4	-7.4
I_DM	Pulsed Drain Current	-37
P_D @TA = 25°C	Power Dissipation	2.0	W
P_D@TA = 70°C	Power Dissipation	1.3	W
	Linear Derating Factor	16	mW/°C
V_GS	Gate-to-Source Voltage	± 8.0	V
T_J, T_STG	Junction and Storage Temperature Range	-55 to + 150	°C

Product Tags:

multi emitter transistor

silicon power transistors

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