MOSFETs Silicon N-Channel MOS (DTMOS)
TK10P60W
Applications
• Switching Voltage Regulators
Features
(1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.)
by used to Super Junction Structure : DTMOS
(2) Easy to control Gate switching
(3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA)
Packaging and Internal Circuit
Absolute Maximum Ratings (Note) (Ta = 25℃ unless otherwise specified)
| Characteristics | Symbol | Rating | Unit |
| Drain-source voltage | VDSS | 600 | V |
| Gate-source voltage | VGSS | ±30 | V |
| Drain current (DC) (Note 1) | ID | 9.7 | A |
| Drain current (pulsed) (Note 1) | IDP | 38.8 | A |
| Power dissipation (Tc = 25℃) | PD | 80 | W |
| Single-pulse avalanche energy (Note 2) | EAS | 121 | mJ |
| Avalanche current | IAR | 2.5 | A |
| Reverse drain current (DC) (Note 1) | IDR | 9.7 | A |
| Reverse drain current (pulsed) (Note 1) | IDRP | 38.8 | A |
| Channel temperature | Tch | 150 | ℃ |
| Storage temperature | Tstg | -55 to 150 | ℃ |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note
1: Ensure that the channel temperature does not exceed 150℃. Note
2: VDD = 90 V, Tch = 25℃ (initial), L = 33.9 mH, RG = 25 Ω, IAR = 2.5 A
Stock Offer (Hot Sell)
| Part No. | Quantity | Brand | D/C | Package |
| SKCH28/06 | 389 | SEMIKRON | 15+ | MODULE |
| SKD30/12A1 | 635 | SEMIKRON | 14+ | MODULE |
| SKD62/16 | 638 | SEMIKRON | 13+ | MODULE |
| SKDH116/16-L100 | 287 | SEMIKRON | 16+ | MODULE |
| SKDH116/16-L75 | 383 | SEMIKRON | 13+ | MODULE |
| SKHI22AH4R | 317 | SEMIKRON | 13+ | MODULE |
| SKIIP13NAB065V1 | 458 | SEMIKRON | 14+ | MODULE |
| SKIIP22NAB12T18 | 278 | SEMIKRON | 16+ | MODULE |
| SKIIP23NAB126V1 | 290 | SEMIKRON | 14+ | MODULE |
| SKIIP24NAB063T12 | 293 | SEMIKRON | 13+ | MODULE |
| SKIIP25AC125V10 | 302 | SEMIKRON | 16+ | MODULE |
| SKIIP32NAB12T1 | 608 | SEMIKRON | 14+ | MODULE |
| SKIIP39ANB16V1 | 227 | SEMIKRON | 13+ | MODULE |
| SKIIP82AC12IT1 | 251 | SEMIKRON | 16+ | MODULE |
| SKIIP82AHB15T1 | 260 | SEMIKRON | 16+ | MODULE |
| SKIIP83AC128IST1 | 224 | SEMIKRON | 14+ | MODULE |
| SKKD100/16 | 503 | SEMIKRON | 16+ | MODULE |
| SKKD162/16 | 434 | SEMIKRON | 13+ | MODULE |
| SKKD46/12 | 659 | SEMIKRON | 16+ | MODULE |
| SKKE81/12E | 515 | SEMIKRON | 14+ | MODULE |
| SKKH106/16E | 200 | SEMIKRON | 16+ | MODULE |
| SKKH57/16E | 719 | SEMIKRON | 16+ | MODULE |
| SKKT162/16E | 425 | SEMIKRON | 16+ | MODULE |
| SKKT162/18E | 392 | SEMIKRON | 16+ | MODULE |
| SKKT210/12E | 326 | SEMIKRON | 16+ | MODULE |
| SKKT250/14E | 329 | SEMIKRON | 16+ | MODULE |
| SKKT330/16E | 296 | SEMIKRON | 16+ | MODULE |
| SKKT430/16E | 254 | SEMIKRON | 15+ | MODULE |
| SKKT500/18E | 236 | SEMIKRON | 16+ | MODULE |
| SKKT57/14E | 590 | SEMIKRON | 16+ | MODULE |
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TK10P60W Power Mosfet Transistor MOSFETs Silicon N-Channel MOS Images
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