DC−DC Converter Power Mosfet Transistor Relay Drive and Motor Drive Application list electronic items

2SJ310 DC−DC Converter, Relay Drive and Motor Drive Applications list electronic items

► 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 80 mΩ (typ.)

► High forward transfer admittance : |Yfs| = 8.0 S (typ.)

► Low leakage current : IDSS = −100 μA (max) (VDS = −60 V) ►Enhancement mode : Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc)

STOCK LIST

power mosfet ic

silicon power transistors

DC−DC Converter Power Mosfet Transistor Relay Drive and Motor Drive Application list electronic items Images