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FDN304PZ P-Channel 1.8V Specified Power Trench MOSFET Switching Power Mosfet

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FDN304PZ P-Channel 1.8V Specified Power Trench MOSFET Switching Power Mosfet

Brand Name : FAIRCHILD

Model Number : FDN304PZ

Certification : Original Factory Pack

Place of Origin : Original

MOQ : 50pcs

Price : negotiation

Payment Terms : T/T, Western Union,PayPal

Supply Ability : 5200PCS

Delivery Time : 1 day

Packaging Details : please contact me for details

Drain-Source Voltage : –20 V

Gate-Source Voltage : ±8 V

Operating and Storage Junction Temperature Range : –55 to +150 °C

ID : –2.4 A

Thermal Resistance, Junction-to-Ambient (Note 1a) : 250 °C/W

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– Pulsed FDN304PZ P-Channel 1.8V Specified PowerTrench MOSFET switching power mosfet

FDN304PZ P-Channel 1.8V Specified Power Trench MOSFET Switching Power MosfetFeatures ·

► –2.4 A, –20 V. RDS(ON) = 52 mW @ VGS = –4.5 V RDS(ON) = 70 mW @ VGS = –2.5 V RDS(ON) = 100 mW @ VGS = –1.8 V

► Fast switching speed

► ESD protection diode

► High performance trench technology for extremely low RDS(ON)

► SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint

Applications

►Battery management

►Load switch

► Battery protection

General Description

This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.

Absolute Maximum Ratings

Symbol Parameter Ratings Units
VDSS Drain-Source Voltage –20 V
VGSS Gate-Source Voltage ±8 V
ID

Drain Current

– Continuous

– Pulsed

–2.4

-10


A
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C

FDN304PZ P-Channel 1.8V Specified Power Trench MOSFET Switching Power Mosfet

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Product Tags:

multi emitter transistor

      

silicon power transistors

      
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