AO4620 Power Mosfet Transistor Complementary Enhancement Mode Field Effect Transistor

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Anterwell Technology Ltd.

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AO4620 Power Mosfet Transistor Complementary Enhancement Mode Field Effect Transistor

Name: AO4620 Power Mosfet Transistor Complementary Enhancement Mode Field Effect Transistor
Brand: Anterwell
Price: 1 USD

Brand Name : Anterwell

Model Number : AO4620

Certification : new & original

Place of Origin : original factory

MOQ : 20pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 8000pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Drain-Source Voltage : 30 / -30 V

Gate-Source Voltage : ±20 V

Pulsed Drain Current : 30 / -30 A

Avalanche Current : 13 / 17 A

Repetitive avalanche energy 0.3mH : 25 / 43 mJ

Junction and Storage Temperature : -55 to 150°C

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AO4620 Complementary Enhancement Mode Field Effect Transistor

General Description

The AO4620 uses advanced trench technology MOSFETs to provide excellent R_DS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications. Standard Product AO4620 is Pb-free (meets ROHS & Sony 259 specifications).

Features

n-channel p-channel

V_DS (V) = 30V -30V

I_D = 7.2A (V_GS=10V) -5.3A (V_GS = -10V)

R_DS(ON) R_DS(ON)

< 24mΩ (V_GS=10V) < 38mΩ (V_GS = -10V)

< 36mΩ (V_GS=4.5V) < 60mΩ (V_GS = -4.5V)

AO4620 Power Mosfet Transistor Complementary Enhancement Mode Field Effect Transistor

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter		Symbol	Max n-channel	Max p-channel	Units
Drain-Source Voltage		V_DS	30	-30	V
Gate-Source Voltage		V_GS	±20	±20	V
Continuous Drain Current ^F	T_A=25°C	I_D	7.2	-5.3	A
Continuous Drain Current ^F	T_A=70°C	I_D	6.2	-4.5	A
Pulsed Drain Current ^B		I_DM	30	-30	A
Power Dissipation ^F	T_A=25°C	P_D	2	2	W
Power Dissipation ^F	T_A=70°C	P_D	1.44	1.44	W
Avalanche Current ^B		I_AR	13	17	A
Repetitive avalanche energy 0.3mH ^B		E_AR	25	43	mJ
Junction and Storage Temperature Range		T_J, T_STG	-55 to 150	-55 to 150	°C

B: Repetitive rating, pulse width limited by junction temperature.

F.The power dissipation and current rating are based on the t ≤ 10s thermal resistance rating.

Stock Offer (Hot Sell)

Part no.

Quantity

Brand

D/C

Package

AD9254BCPZ-150	1500	AD	16+	QFN
ADE-10H	1500	MINI	16+	SOP6
CNY74-4	1500	FSC	13+	DIP16
CY2305SXC-1HT	1500	CYPRESS	15+	SOP8
IRFP23N50L	1500	IR	16+	TO-3P
L7824	1500	ST	16+	TO-220
LFCN-530+	1500	MINI-CIRC	14+	SMD
LNK304PN	1500	POWER	14+	DIP-7
LPS6235-104MLC	1500	COILCRAFT	14+	SMD
LT1248CN	1500	LT	16+	DIP
MB15E07SLPFV1	1500	FUJITSU	16+	TSSOP
SN74HC165DR	1500	TI	13+	SOP
V30200C-E3/4W	1500	VISHAY	15+	TO-220
PC733	1501	SHARP	16+	DIP
HCPL-0466-500E	1517	AVAGO	16+	SOP-8
BDW47	1520	ON	14+	TO-220
STF13NK50Z	1520	ST	14+	TO-220
M51995AP	1522	MIT	14+	DIP
XC3S1600E-4FGG320C	522	XILINX	16+	BGA
RC4558P	1528	TI	16+	DIP8
ADA4528-2ARM	1550	ADI	13+	MSOP8
PIC16F648A-I/P	1555	MICROCHIP	15+	DIP
TLP2531	1558	TOSHIBA	16+	SOP8
IRFP150N	1577	IR	16+	TO-247
IR2520DPBF	1580	IR	14+	DIP-8
EP3C10F256C8N	1588	ALTERA	14+	BGA
IRFPC60	1588	IR	14+	TO-247
LM2917N-8	1588	NS	16+	DIP8
TDA7851L	1633	ST	16+	ZIP25
NCP1203D60R2	1665	ON	13+	SOP-8

Product Tags:

multi emitter transistor

silicon power transistors

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