2SC3356- T1B NPN Silicon RF Power Mosfet Transistor 100 mA Collector Current

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Anterwell Technology Ltd.

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2SC3356- T1B NPN Silicon RF Power Mosfet Transistor 100 mA Collector Current

Name: 2SC3356 T1B NPN Silicon RF Power Mosfet Transistor 100 mA Collector Current
Brand: Anterwell
Price: 1 USD

Brand Name : Anterwell

Model Number : 2SC3356-T1B

Certification : new & original

Place of Origin : original factory

MOQ : 20pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 9000pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Collector to Base Voltage : 20 V

Collector to Emitter Voltage : 12 V

Emitter to Base Voltage : 3.0 V

Collector Current : 100 mA

Total Power Dissipation : 200 mW

Junction Temperature : 150 °C

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2SC3356- T1B NPN Silicon RF Power Mosfet Transistor 100 mA Collector Current

FEATURES

• Low noise and high gain : NF = 1.1 dB TYP., G_a = 11 dB TYP. @ V_CE = 10 V, I_C = 7 mA, f = 1 GHz

• High power gain : MAG = 13 dB TYP. @ V_CE = 10 V, I_C = 20 mA, f = 1 GHz

ABSOLUTE MAXIMUM RATINGS (T_A = +25°C)

Parameter	Symbol	Ratings	Unit
Collector to Base Voltage	V_CBO	20	V
Collector to Emitter Voltage	V_CEO	12	V
Emitter to Base Voltage	V_EBO	3.0	V
Collector Current	I_C	100	mA
Total Power Dissipation	P_tot ^Note	200	mW
Junction Temperature	T_j	150	°C
Storage Temperature	T_stg	−65 to +150	°C

Note Free air

PACKAGE DIMENSIONS

3-PIN MINIMOLD (UNIT: mm)

2SC3356- T1B NPN Silicon RF Power Mosfet Transistor 100 mA Collector Current

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

Stock Offer (Hot Sell)

Part NO.

Q'ty

MFG

D/C

Package

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Product Tags:

power mosfet ic

multi emitter transistor

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